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savantic semiconductor product specification silicon pnp power transistors 2SB1096 d escription with to-220fa package high breakdown voltage complement to type 2sd1587 applications for tv vertical output applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -200 v v ceo collector -emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -2 a t a =25 2.0 p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1096 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma; i b =0 -150 v v (br)ebo emitter-base breakdown voltage i e =-1ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-500ma ;i b =-50ma -1.0 v v besat base-emitter saturation voltage i c =-500ma ;i b =-50ma -1.5 v i cbo collector cut-off current v cb =-150v; i e =0 -50 a i ebo emitter cut-off current v eb =-5v; i c =0 -50 a h fe dc current gain i c =-0.4a ; v ce =-10v 40 200 f t transition frequency i c =-0.4a; v ce =-10v 5 mhz h fe classifications m l k 40-80 60-120 100-200
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1096 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)

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